We are happy to announce that part number PAL-004 (Microcircuit Memory) is now available and ready for immediate shipping! The NSN for part number PAL-004 is 5962011708174. This part is manufactured by Bae Systems. Are you looking for the best quote for this part now? You can get an instant quote on this part as soon as you fill out the form.To ensure that you get your quotes quickly, make sure to fill out all the fields below, especially the asterisk (*) marked ones such as Need Parts By and Quantity (ea). Your quote for PAL-004 will be calculated based on the values entered in these fields.
Part Number : PAL-004 | Alternate P/N : PAL004 | Item Name : Microcircuit Memory | NSN : 5962-01-170-8174 | FSC : 5962 Microcircuits Electronic |
Manufacturer : Bae Systems | CAGE Code : K0978 |
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NSNs are 13-digit serial numbers assigned to items of the federal supply system by the Defense Logistics Agency (DLA), and used by the North Atlantic Treaty Organization (NATO). Are you interested in learning more about NSN 5340016616963 with part number 250SG1108-1? Please feel free to reach out and call us at our toll-free number, +1-714-705-4780, or email us your Bill of Materials (BOM) at sales@cogentpurchasing.com. If you want to get updates regarding our latest products and offers, download the ASAP Semiconductor mobile app from the App Store or Google Play.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-170-8174 Item Description: Microcircuit Memory | 5962 | 011708174 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Pal-004 | 2 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 090 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDPROGRAMMABLE AND HIGH SPEED AND 3-STATE OUTPUT AND BIPOLAR AND SCHOTTKY |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN12 INPUT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC45 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
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