Get a Quote for G8509.B01 with NSN 5962012406660 of Bae Systems Information And Electronic Systems Integration Inc
We are happy to announce that part number G8509.B01 Microcircuit Memory is now available and ready for immediate shipping! The NSN for part number G8509.B01 is 5962012406660. This part is manufactured by Bae Systems Information And Electronic Systems Integration Inc. Are you looking for the best quote for this part now? You can get an instant quote on this part as soon as you fill out the form.To ensure that you get your quotes quickly, make sure to fill out all the fields below, especially the asterisk (*) marked ones such as Need Parts By and Quantity (ea). Your quote for G8509.B01 will be calculated based on the values entered in these fields.
| Part Number : G8509.B01 | Alternate P/N : G8509B01 | Item Name : Microcircuit Memory | NSN : 5962-01-240-6660 | FSC : 5962 Microcircuits Electronic |
| Manufacturer : Bae Systems Information And Electronic Systems Integration Inc | CAGE Code : 94117 |
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NSN Information for Part Number G8509.B01 with NSN 5962-01-240-6660, 5962012406660NSN FSC NIIN CLS Hazmat DEMIL Cancelled NSN 5962-01-240-6660
Item Description:Microcircuit Memory
5962 012406660 0 N B CIIC HCC ESD PMIC Criticality ENAC 7 B A 0 Part Number ISC RNVC RNCC HCC MSDS SADC G8509.B01 2 1 5
Characteristics Data of NSN 5962-01-240-6660, 5962012406660MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH0 760 INCHES NOMINAL MEMORY ADAT BODY WIDTH0 270 INCHES NOMINAL MEMORY ADAU BODY HEIGHT0 150 INCHES NOMINAL MEMORY AFGA OPERATING TEMP RANGE0 075 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDHERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND HIGH SPEED MEMORY CQSJ INCLOSURE MATERIALCERAMIC MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN10 INPUT MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZEQ TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT MEMORY CZER MEMORY DEVICE TYPEROM MEMORY CZZZ MEMORY CAPACITYUNKNOWN MEMORY TTQY TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-240-6660 Item Description: Microcircuit Memory | 5962 | 012406660 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| G8509.B01 | 2 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 760 INCHES NOMINAL |
| MEMORY | ADAT | BODY WIDTH0 270 INCHES NOMINAL |
| MEMORY | ADAU | BODY HEIGHT0 150 INCHES NOMINAL |
| MEMORY | AFGA | OPERATING TEMP RANGE0 075 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND HIGH SPEED |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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